DMG1012T Datasheet, Mosfet, VBsemi

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Part number:

DMG1012T

Manufacturer:

VBsemi

File Size:

349.34kb

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📄 Datasheet

Description:

N-channel mosfet.

TAGS

DMG1012T

VBsemi

📁 Related Datasheet

DMG1012T - N-Channel MOSFET (Diodes)
Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up.

DMG1012UW - N-Channel MOSFET (Diodes)
Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.

DMG1013T - P-Channel MOSFET (Diodes)
DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) 700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V ID TA =.

DMG1013TQ - 20V P-CHANNEL MOSFET (Diodes)
DMG1013TQ 20V P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary BVDSS -20V RDS(ON) Max 700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ .

DMG1013UW - P-Channel MOSFET (Diodes)
DMG1013UW P-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed .

DMG1013UWQ - P-Channel MOSFET (Diodes)
Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • .

DMG1016UDW - MOSFET (Diodes)
NEW PRODUCT DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 V(BR)DSS 20V RDS(ON) 0.45Ω @ VGS = 4.5V 0.75Ω @ VG.

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.. DMG1016V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • • •.

DMG1023UV - Dual P-Channel MOSFET (Diodes)
Features  Dual P-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Le.

DMG1023UVQ - Dual P-Channel MOSFET (DIODES)
DMG1023UVQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(on) 0.75Ω @ VGS = -4.5V 1.05Ω @ VGS = -2.5V ID TA = +25°C -1.03A .