* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surfaced Mount Package
* ESD Protected Gate (>6kV Human Body Model)
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halog
DMG302PU Datasheet (268.34 KB)
DMG302PU
268.34 KB
P-channel mosfet.
NEW PRODUCT
DMG302PU
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -25V
RDS(ON)
10Ω @ VGS = -4.5V 13Ω @ VGS = -2.7V
ID TA = +25°.
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Product Summary
V(BR)DSS 25V
RDS(ON)
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NEW PRODUCT
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Product Summary
V(BR)DSS -30V
RDS(on) max
50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @.
DMG3401LSNQ - 30V P-Channel MOSFET
(DIODES)
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30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -30V
RDS(on) max
50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V.
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(Diodes)
DMG3402L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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RDS(ON)
52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V
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DMG3402LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 30V
RDS(ON) MAX
52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = .
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DMG3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max 25mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V
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5.8A
4.8A
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Product Summary
V(BR)DSS 30V
RDS(ON) Max 50mΩ @ VGS = 10V 70mΩ @ VGS = 4.5V
ID Max TA = +25°C
3.6A
2.8A
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DMG3407SSN
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) max 50mΩ @ VGS = -10V 72mΩ @ VGS = -4.5V
ID m.
