DMN2009USS 20V N-CHANNEL MOSFET

DIODES

Description

ADVANCED INFORMATION DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 8mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V 12mΩ .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it idea.

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Datasheet Specifications

Part number: DMN2009USS
Manufacturer: DIODES ↗
File Size: 453.24 KB
Datasheet: DMN2009USS-DIODES.pdf
Description: 20V N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Backlighting
* Power Management Functions
* DC-DC Converters Mechanical Data
* Case: SO-8

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DMN2009USS 20V N-CHANNEL MOSFET DIODES

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