DMN2009LSS Single N-channel MOSFET

Diodes

Description

DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 8mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V ID.
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making i.

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Datasheet Specifications

Part number: DMN2009LSS
Manufacturer: DIODES ↗
File Size: 216.64 KB
Datasheet: DMN2009LSS-Diodes.pdf
Description: Single N-channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards f

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Backlighting
* Power Management Functions
* DC-DC Converters SO-8 S Mechanical Data
* C

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DMN2009LSS Single N-channel MOSFET Diodes

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