* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* 100% UIS & Rg tested
* Totally Lead-Free & Fully
DMN2005UFG Datasheet (509.15 KB)
DMN2005UFG
509.15 KB
N-channel mosfet.
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
DMN2005UFG
20V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 20V
RDS(ON) Max
4.6m .
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Description
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