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DMN2005DLP4K Dual N-Channel MOSFET

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Description

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Features

* Ultra Low Profile Package
* Low On-Resistance
* Very Low Gate Threshold Voltage, 0.9V Max.
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Com

Applications

* shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchase

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