DMN2011UTS N-CHANNEL MOSFET

DIODES

Description

DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID Max TC = +25°C 21A 20A .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal f.

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Datasheet Specifications

Part number: DMN2011UTS
Manufacturer: DIODES ↗
File Size: 434.28 KB
Datasheet: DMN2011UTS-DIODES.pdf
Description: N-CHANNEL MOSFET

Features

* Low Gate Threshold Voltage
* Low On-Resistance
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Battery Management Application
* Power Management Functions
* DC-DC Converters Mechanical Data
* C

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DMN2011UTS N-CHANNEL MOSFET DIODES

DIODES DMN2011UTS-like datasheet