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DMN2011UTS

N-CHANNEL MOSFET

DMN2011UTS Features

* Low Gate Threshold Voltage

* Low On-Resistance

* ESD Protected Gate

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note 3)

* Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET

DMN2011UTS General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Battery Management Application
* Power Management Functions
* DC-DC Converters Mechan.

DMN2011UTS Datasheet (434.28 KB)

Preview of DMN2011UTS PDF

Datasheet Details

Part number:

DMN2011UTS

Manufacturer:

DIODES ↗

File Size:

434.28 KB

Description:

N-channel mosfet.
DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID Max TC = +25°C 21A 20A .

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DMN2011UTS N-CHANNEL MOSFET DIODES

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