DMN2011UFDF
580.19kb
20v n-channel mosfet. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance,
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V(BR)DSS 20V
RDS(ON) max
9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V
ID max TA = +25°C
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RDS(ON) max
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ID max TA = +25°C
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