DMN2011UFX Dual N-Channel MOSFET

Diodes

Description

ADVANCED INFORMATION Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID max TA = +25°C 12.2 A 10.4 A DMN2011UFX DUA.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it idea.

📥 Download Datasheet

DMN2011UFX Datasheet Preview — Preview of DMN2011UFX PDF

Datasheet Specifications

Part number: DMN2011UFX
Manufacturer: DIODES ↗
File Size: 615.77 KB
Datasheet: DMN2011UFX-Diodes.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* General Purpose Interfacing Switch
* Power Management Functions Mechanical Data
* Case: V-DFN2050-4

DMN2011UFX Distributors

📁 Related Datasheet

DMN2011UTS DMN2015UFDF DMN2004DWK DMN2004K DMN2004VK DMN2004WK

📌 All Tags

DMN2011UFX Dual N-Channel MOSFET Diodes

Diodes DMN2011UFX-like datasheet