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DMN2014LHAB Dual N-Channel MOSFET

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Description

ADVANCE INFORMATION DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it i.

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Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualifi

Applications

* Applications
* Power Management Functions
* Battery Pack

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