DMN2011UFDE

N-Channel MOSFET

Diodes

DMN2011UFDE Features

* 0.6mm Profile

* Ideal for Low Profile Applications

* PCB Footprint of 4mm2

* Low Gate Threshold Voltage

* Low On-Resistance

* ESD Protected Gate

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Gr

DMN2011UFDE General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications * General Purpose Interfacing Switch * Power Management Functions U-D.

DMN2011UFDE Datasheet (304.69 KB)

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Datasheet Details

Part number:

DMN2011UFDE

Manufacturer:

DIODES ↗

File Size:

304.69 KB

Description:

N-channel mosfet.
ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID max TA = +25°C 11.7A 10.8A.

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DMN2011UFDE N-Channel MOSFET Diodes

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DMN2011UFDE Features

DMN2011UFDE General Description

Datasheet Details

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