DMN2011UFDE Datasheet - Diodes

DMN2011UFDE N-Channel MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications * General Purpose Interfacing Switch * Power Management Functions U-D.

DMN2011UFDE Features

* 0.6mm Profile

* Ideal for Low Profile Applications

* PCB Footprint of 4mm2

* Low Gate Threshold Voltage

* Low On-Resistance

* ESD Protected Gate

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Gr

DMN2011UFDE-Diodes.pdf