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DMN2011UFDE N-Channel MOSFET

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Description

ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID max TA = +25°C 11.7A 10.8A.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal.

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Features

* 0.6mm Profile

Applications

* Applications
* General Purpose Interfacing Switch

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