DMN2013UFX Dual N-Channel MOSFET

Diodes

Description

DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 11.5mΩ @ VGS = 4.5V 14mΩ @ VGS = 2.5V ID max TA = +25°C.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it i.

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Datasheet Specifications

Part number: DMN2013UFX
Manufacturer: DIODES ↗
File Size: 265.13 KB
Datasheet: DMN2013UFX-Diodes.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected
* Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reli

Applications

* Applications
* General Purpose Interfacing Switch

DMN2013UFX Distributors

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DMN2013UFX Dual N-Channel MOSFET Diodes

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