DMN2013UFX Datasheet, Mosfet, Diodes

DMN2013UFX Features

  • Mosfet
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully

PDF File Details

Part number:

DMN2013UFX

Manufacturer:

DIODES ↗

File Size:

265.13kb

Download:

📄 Datasheet

Description:

Dual n-channel mosfet. This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching perform

Datasheet Preview: DMN2013UFX 📥 Download PDF (265.13kb)
Page 2 of DMN2013UFX Page 3 of DMN2013UFX

DMN2013UFX Application

  • Applications Applications
  • General Purpose Interfacing Switch
  • Power Management Functions Features and Benefits
  • Low On

TAGS

DMN2013UFX
Dual
N-Channel
MOSFET
Diodes

📁 Related Datasheet

DMN2013UFDE - 20V N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes)
DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) MAX 11m @ VGS = 4.5V 20V 13mΩ @ VGS = 2.5V 30m @ VGS = 1.8V 50mΩ.

DMN2010UDZ - DUAL N-CHANNEL MOSFET (Diodes)
A D VNAENACWDEPVDRAIONNDCFUEOCIRTNMFAOT IROMNA T I O N DMN2010UDZ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS 24V RD.

DMN2011UFDE - N-Channel MOSFET (Diodes)
ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID max TA = +25°C 11.7A 10.8A.

DMN2011UFDF - 20V N-CHANNEL MOSFET (Diodes)
ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID MAX TA = +25°C 11.7A 10.8A Description This new.

DMN2011UFX - Dual N-Channel MOSFET (Diodes)
ADVANCED INFORMATION Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID max TA = +25°C 12.2 A 10.4 A DMN2011UFX DUA.

DMN2011UTS - N-CHANNEL MOSFET (DIODES)
DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID Max TC = +25°C 21A 20A .

DMN2014LHAB - Dual N-Channel MOSFET (Diodes)
ADVANCE INFORMATION DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0.

DMN2015UFDE - 20V N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes)
DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V .

DMN2016LFG - Dual N-Channel MOSFET (Diodes)
ADVANCE INFORMATION DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 18mΩ @ VGS = 4.5V 30mΩ @ VGS = 1.8V.

DMN2016LHAB - Dual N-Channel MOSFET (Diodes)
NAEDWVPARNOCDEUICNTF O R M A T I O N DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on)max 15.5mΩ @ VGS = 4.5.

Stock and price

Diodes Incorporated
MOSFET 2N-CH 20V 10A 6DFN
DigiKey
DMN2013UFX-7
0 In Stock
Qty : 15000 units
Unit Price : $0.23
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts