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DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) MAX 11m @ VGS = 4.5V 20V 13mΩ @ VGS = 2.5V 30m @ VGS = 1.8V 50mΩ.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it i.

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Datasheet Specifications

Part number: DMN2013UFDE
Manufacturer: DIODES ↗
File Size: 273.28 KB
Datasheet: DMN2013UFDE-Diodes.pdf
Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* 0.6mm profile

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DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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