DMN3069L N-CHANNEL MOSFET

DIODES

Description

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 30V RDS(ON) MAX 30mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V ID MAX TA = +25°C 5.3A 4.6A .
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

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Datasheet Specifications

Part number: DMN3069L
Manufacturer: DIODES ↗
File Size: 464.11 KB
Datasheet: DMN3069L-DIODES.pdf
Description: N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For auto

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* Load Switch
* DC-DC Converters
* Power Management Functions DMN3069L N-CHANNEL ENHANCEME

DMN3069L Distributors

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DMN3069L N-CHANNEL MOSFET DIODES

DIODES DMN3069L-like datasheet