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DMN3067LW N-Channel MOSFET

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Description

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary V(BR)DSS 30V RDS(ON) 67mΩ @ VGS = 4.5V 70mΩ @ VGS = 4.0V 98mΩ @ VGS = 2.5V ID TA = +25°C 2.6A 2.5A .
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it.

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Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Quali

Applications

* Applications
* Switching

DMN3067LW Distributors

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