DMN32D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Description

DMN32D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 30V RDS(ON) 1.2Ω @ VGS = 4.5V 1.5Ω @ VGS = 2.5V ID TA = +2.
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it id.

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Datasheet Specifications

Part number: DMN32D0LV
Manufacturer: DIODES ↗
File Size: 762.72 KB
Datasheet: DMN32D0LV-DIODES.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antim

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DMN32D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DIODES

DIODES DMN32D0LV-like datasheet