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DMN3401LV Dual N-CHANNEL MOSFET

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Description

DMN3401LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V ID Max TA = +25°C 1.1A 0.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency.

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Datasheet Specifications

Part number
DMN3401LV
Manufacturer
DIODES ↗
File Size
706.86 KB
Datasheet
DMN3401LV-DIODES.pdf
Description
Dual N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

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