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DMT31M7LPS N-Channel MOSFET

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Description

AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIIUOCONTN Product Summary BVDSS 30V RDS(ON) Max 1.7mΩ @ VGS = 10V 2.4mΩ @ VGS = 4.5V ID Max TC = +25°C 100A.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it idea.

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Features

* Low RDS(ON)
* Minimizes On-State Losses
* Excellent Qgd x RDS(ON) Product (FOM)
* Advanced Technology for DC-DC Converters
* Small Form Factor Thermally Efficient Package Enables Higher Density End Products
* 100% Unclamped Inductive Switching
* Ensures More Rel

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Backlighting
* Power Management Functions
* DC-DC Converters Mechanical Data
* Case: PowerDI®50

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