* Low RDS(ON)
* Minimizes On-State Losses
* Excellent Qgd x RDS(ON) Product (FOM)
* Advanced Technology for DC-DC Converters
* Small Form Factor Thermally Efficient Package Enables Higher Density End Products
* 100% Unclamped Inductive Switching
* Ensures More Rel
DMT31M6LPS Datasheet (499.28 KB)
DMT31M6LPS
499.28 KB
N-channel mosfet.
ADVANCE INFORMATION
DMT31M6LPS
Green
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Product Summary
BVDSS 30V
RDS(ON) Max 1.35mΩ @VGS = 10V 2.4mΩ @VGS .
📁 Related Datasheet
DMT31M7LPS - N-Channel MOSFET
(DIODES)
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIIUOCONTN
Product Summary
BVDSS 30V
RDS(ON) Max 1.7mΩ @ VGS = 10V 2.4mΩ @ VGS = 4.5V
ID Max TC = +25°C
100A.
DMT31M7LSS - N-CHANNEL MOSFET
(DIODES)
DMT31M7LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIIUOCONTN
Product Summary
BVDSS 30V
RDS(ON) Max 2.7mΩ @ VGS = .
DMT3 - Output Power Chokes
(Coilcraft)
Document 139-1
Output Power Chokes – Toroid Styles
The DMT power inductors are designed primarily for use as output chokes in switching power supplie.
DMT3002LPS - 30V N-CHANNEL MOSFET
(Diodes)
Green
DMT3002LPS
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K)
Product Summary
BVDSS 30V
RDS(ON) 1.6mΩ @ VGS = 10V
ID TC = +25°C
.
DMT3003LFG - N-CHANNEL MOSFET
(Diodes)
Green DMT3003LFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max 3.2mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V
ID Max TC = +25°.
DMT3003LFGQ - 30V N-CHANNEL MOSFET
(DIODES)
Green
DMT3003LFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
BVDSS 30V
RDS(ON) Max 3.2mΩ @ VGS = 10V 5.5mΩ @ VG.
DMT3004LFG - N-CHANNEL MOSFET
(Diodes)
ADVANCE INNEFWORPRMOADTIUOCNT
DMT3004LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max
4.5mΩ @ VGS = 10V 7.0mΩ @ VGS = 4.
DMT3004LPS - N-Channel MOSFET
(Diodes)
ADAVDAVNACNECDEI INNNFEFOWORRPMRMAOATIDTIOUONCNT
Green
DMT3004LPS
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
Features an.
