* Low RDS(ON)
* Minimizes On-State Losses
* Excellent Qgd x RDS(ON) Product (FOM)
* Advanced Technology for DC-DC Converters
* Small Form Factor Thermally Efficient Package Enables Higher Density End Products
* 100% Unclamped Inductive Switching
* Ensures More Rel
DMT34M1LPS Datasheet (387.62 KB)
DMT34M1LPS
387.62 KB
N-channel mosfet.
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIIUOCONTN
Product Summary
BVDSS 30V
RDS(ON) Max 3.2mΩ @ VGS = 10V 5.2mΩ @ VGS = 4.5V
ID Max TC = +25°C
100A.
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The DMT power inductors are designed primarily for use as output chokes in switching power supplie.
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DMT3002LPS
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Product Summary
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RDS(ON) 1.6mΩ @ VGS = 10V
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Product Summary
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RDS(ON) Max 3.2mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V
ID Max TC = +25°.
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Product Summary
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RDS(ON) Max 3.2mΩ @ VGS = 10V 5.5mΩ @ VG.
DMT3004LFG - N-CHANNEL MOSFET
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ADVANCE INNEFWORPRMOADTIUOCNT
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DMT3004LPS - N-Channel MOSFET
(Diodes)
ADAVDAVNACNECDEI INNNFEFOWORRPMRMAOATIDTIOUONCNT
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DMT3004LPS
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
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DMT3006LDK - N-Channel MOSFET
(Diodes)
ADAVDAAVDNAVCNAECNDECIDENI IFNNNOFEFROWORMRPAMRMTAIOATOIDTINOUONCNT
DMT3006LDK
N-CHANNEL ENHANCEMENT MODE MOSFET
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VDSS 30V
RDS(ON) .
DMT3006LFDF - N-CHANNEL MOSFET
(Diodes)
ADVANCED INFORMATION
Product Summary
BVDSS 30V
RDS(ON) Max
7mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V 15mΩ @ VGS = 3.7V
ID Max TA = +25°C
14.1A 11.8A 9.6A
.
