* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching
* Ensures More Reliable and Robust End Application
* Low RDS(ON)
* Minimizes Power Losses
* Low QG
* Minimizes Switching Losses
* Lead-Free Fin
DMTH6009SPS Datasheet (453.58 KB)
DMTH6009SPS
453.58 KB
60v n-channel mosfet.
Green
DMTH6009SPS
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON) Max
10mΩ @ VGS = 10V 13.5mΩ @ VGS .
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RDS(ON) Max 10mΩ @.
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Product Summary
BVDSS 60V
RDS(ON) Max
10mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V
ID TC = +25°C
(Note 9) 89.5A
81.7A
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Green
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RDS(ON) Max
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60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
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RDS(ON) Max
2mΩ @ VGS = 10V 3.3mΩ @ VGS = 4.
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60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
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RDS(ON) Max
2mΩ @ VGS = 10V 3.3mΩ @ VGS = .
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Product Summary
Features
BVDSS 60V
R.
DMTH6004LPSW - N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH6004LPSW
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60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON) Max 3.1mΩ @VGS = 10V 4.5mΩ @VGS = 4.
