DMWSH120H28SM3Q 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

DIODES

Description

DMWSH120H28SM3Q Green 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET Product Summary BVDSS 1200V RDS(ON) Max 28.5mΩ @VGS = 15V ID TC = +25°C 97.4A .
and Applications This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high.

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Datasheet Specifications

Part number: DMWSH120H28SM3Q
Manufacturer: DIODES ↗
File Size: 572.58 KB
Datasheet: DMWSH120H28SM3Q-DIODES.pdf
Description: 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

Features

* Low On-Resistance

Applications

* This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for highefficiency power-management applications.
* EV high-power DC-DC converters
* EV charging systems
* AC-DC traction inverters
* Automotive motor drivers

DMWSH120H28SM3Q Distributors

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DMWSH120H28SM3Q 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET DIODES

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