DMWSH120H28SM4

1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

DIODES

DMWSH120H28SM4 Features

* Low On-Resistance

* High BVDSS Rating for Power Application

* Low Input Capacitance

* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note 3)

* An automotive-compliant part is available under separate datasheet (DMWSH120H28SM4Q) M

DMWSH120H28SM4 General Description

and Applications This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for highefficiency power-management applications.
* EV high-power DC-DC converters
* EV charging systems
* AC-DC traction inverters
* Automoti.

DMWSH120H28SM4 Datasheet (618.16 KB)

DMWSH120H28SM4 Datasheet Preview — Preview of DMWSH120H28SM4 PDF

Datasheet Details

Part number:

DMWSH120H28SM4

Manufacturer:

DIODES ↗

File Size:

618.16 KB

Description:

1200v n-channel silicon carbide power mosfet.
DMWSH120H28SM4 Green 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET Product Summary BVDSS 1200V RDS(ON) Max 28.5mΩ @VGS = 15V ID TC = +25°C 100A De.

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DMWSH120H28SM4 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET DIODES

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DMWSH120H28SM4 Features

DMWSH120H28SM4 General Description

Datasheet Details

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Description:

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