DMWSH120H43SM4

1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

DIODES

DMWSH120H43SM4 Features

* Low On-Resistance

* High BVDSS Rating for Power Application

* Low Input Capacitance

* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note 3)

* For automotive applications requiring specific change control (i.e. parts qualified to

DMWSH120H43SM4 General Description

and Applications This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for highefficiency power-management applications.
* EV high-power DC-DC converters
* EV charging systems
* AC-DC traction inverters
* Automoti.

DMWSH120H43SM4 Datasheet (609.53 KB)

DMWSH120H43SM4 Datasheet Preview — Preview of DMWSH120H43SM4 PDF

Datasheet Details

Part number:

DMWSH120H43SM4

Manufacturer:

DIODES ↗

File Size:

609.53 KB

Description:

1200v n-channel silicon carbide power mosfet.
DMWSH120H43SM4 Green 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET Product Summary BVDSS 1200V RDS(ON) Max 43mΩ @ VGS = 15V ID TC = +25°C 72.7A De.

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DMWSH120H43SM4 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET DIODES

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DMWSH120H43SM4 Features

DMWSH120H43SM4 General Description

Datasheet Details

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