DXT2011P5Q 100V NPN TRANSISTOR

DIODES

Description

DXT2011P5Q 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR .
This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications Mechanical Data. Case: Power.

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Datasheet Specifications

Part number: DXT2011P5Q
Manufacturer: DIODES ↗
File Size: 424.81 KB
Datasheet: DXT2011P5Q-DIODES.pdf
Description: 100V NPN TRANSISTOR

Features

* BVCEO > 100V
* IC = 6A High Continuous Collector Current
* ICM = 10A Peak Collector Current
* PD up to 3.2W
* 43% Smaller than SOT223; 60% Smaller than TO252
* Maximum Height just 1.1mm
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Applications

* Mechanical Data
* Case: PowerDI®5
* Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
* Moisture Sensitivity: Level 1 per J-STD-020
* Terminals: Finish
* Matte Tin Plated Leads. Solderable per MIL-STD-202, Meth

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DXT2011P5Q 100V NPN TRANSISTOR DIODES

DIODES DXT2011P5Q-like datasheet