DXT651Q Datasheet, Transistor, DIODES

DXT651Q Features

• Transistor
• BVCEO > 60V
• IC = 3A High Continuous Collector Current
• ICM up to 6A Peak Pulse Current
• 2W Power Dissipation
• Low Saturation Voltage VCE(S

PDF File Details

Part number:

DXT651Q

Manufacturer:

DIODES ↗

File Size:

379.99kb

Download:

📄 Datasheet

Description:

60v npn transistor. This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features

DXT651Q Application

• Applications Features
• BVCEO > 60V
• IC = 3A High Continuous Collector Current
• ICM up to 6A Peak Pulse Current

TAGS

DXT651Q

DIODES

📁 Related Datasheet

DXT651 - 60V NPN MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > 60V  IC = 3A High Continuous Collector Current  ICM up to 6A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage V.

DXT690BP5 - NPN HIGH GAIN TRANSISTOR (Diodes)
Features • BVCEO > 45V • IC = 3A High Continuous Collector Current • ICM = 6A Peak Collector Current • High gain device >400 @1A • RCE(sat) = 77mΩ for.

DXT696BK - NPN MEDIUM POWER TRANSISTOR (Diodes)
DXT696BK 180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252 Features  BVCEO > 180V  IC = 0.5A high Continuous Collector Current  ICM = 1A Peak Pu.

DXT13003DG - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features • BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector.

DXT13003DK - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features • BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .

DXT13003EK - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
DXT13003EK 460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features • BVCEO > 460V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .

DXT2010P5 - NPN MEDIUM POWER TRANSISTOR (Diodes)
ADVANCE INFORMATION Features • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = 6A;.

DXT2011P5 - NPN MEDIUM POWER TRANSISTOR (Diodes)
ADVANCE INFORMATION A Product Line of Diodes Incorporated DXT2011P5 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR POWERDI®5 Features • BVCEO > 100.

DXT2011P5Q - 100V NPN TRANSISTOR (DIODES)
DXT2011P5Q 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR Description This bipolar junction transistor (BJT) is designed to meet the stringent requi.

DXT2012P5 - PNP MEDIUM POWER TRANSISTOR (Diodes)
ADVANCE INFORMATION Features • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = -5..