DXT651
472.50kb
60v npn medium power transistor.
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DXT651Q - 60V NPN TRANSISTOR
(DIODES)
Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
Features
BVCEO > 60V .
DXT690BP5 - NPN HIGH GAIN TRANSISTOR
(Diodes)
Features
• BVCEO > 45V • IC = 3A High Continuous Collector Current • ICM = 6A Peak Collector Current • High gain device >400 @1A • RCE(sat) = 77mΩ for.
DXT696BK - NPN MEDIUM POWER TRANSISTOR
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180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252
Features
BVCEO > 180V IC = 0.5A high Continuous Collector Current ICM = 1A Peak Pu.
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(Diodes)
DXT13003DG
450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223
Features
• BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector.
DXT13003DK - NPN HIGH VOLTAGE POWER TRANSISTOR
(Diodes)
DXT13003DK
450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252
Features
• BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .
DXT13003EK - NPN HIGH VOLTAGE POWER TRANSISTOR
(Diodes)
DXT13003EK
460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252
Features
• BVCEO > 460V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .
DXT2010P5 - NPN MEDIUM POWER TRANSISTOR
(Diodes)
ADVANCE INFORMATION
Features
• 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = 6A;.
DXT2011P5 - NPN MEDIUM POWER TRANSISTOR
(Diodes)
ADVANCE INFORMATION
A Product Line of Diodes Incorporated
DXT2011P5
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR POWERDI®5
Features
• BVCEO > 100.
DXT2011P5Q - 100V NPN TRANSISTOR
(DIODES)
DXT2011P5Q
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR
Description
This bipolar junction transistor (BJT) is designed to meet the stringent requi.
DXT2012P5 - PNP MEDIUM POWER TRANSISTOR
(Diodes)
ADVANCE INFORMATION
Features
• 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = -5..