Datasheet4U Logo Datasheet4U.com

DXT5551

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DXT5551 General Description

Designed for general purpose applications requiring high breakdown voltages. SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect.

DXT5551 Datasheet (261.75 KB)

Preview of DXT5551 PDF

Datasheet Details

Part number:

DXT5551

Manufacturer:

Dc Components

File Size:

261.75 KB

Description:

Technical specifications of npn epitaxial planar transistor.
www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descrip.

📁 Related Datasheet

DXT5551 - NPN TRANSISTOR (Diodes)
Features  BVCEO > 160V  IC = 600mA High Collector Current  Complementary PNP Type: DXT5401  Ideal for Medium Power Switching or Amplification Appl.

DXT5551P5 - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
ADVANCE INFORMATION Features and Benefits • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 2.25W • BVCEO >.

DXT5401 - NPN Transistor (Dc Components)
.. DC COMPONENTS CO., LTD. R DXT5401 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Descrip.

DXT5401 - PNP SURFACE MOUNT TRANSISTOR (Diodes)
Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DXT5551) • Ideally Suited for Automated Assembly Processes • Ideal fo.

DXT5616U - NPN MEDIUM POWER TRANSISTOR (Diodes)
OBSOLETE – PART DISCONTINUED Green DXT5616U 80V NPN MEDIUM POWER TRANSISTOR IN TO126 Features • BVCEO > 80V • IC = 1A Continuous Collector Current.

DXT13003DG - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features • BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector.

DXT13003DK - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features • BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .

DXT13003EK - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
DXT13003EK 460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features • BVCEO > 460V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .

TAGS

DXT5551 TECHNICAL SPECIFICATIONS NPN EPITAXIAL PLANAR TRANSISTOR Dc Components

DXT5551 Distributor