DXT5551 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Dc Components

Description

www.DataSheet4U.com DC COMPONENTS CO., LTD.R DXT5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descrip.
Designed for general purpose applications requiring high breakdown voltages.

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Datasheet Specifications

Part number: DXT5551
Manufacturer: Dc Components
File Size: 261.75 KB
Datasheet: DXT5551_DcComponents.pdf
Description: TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Applications

* requiring high breakdown voltages. SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junctio

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DXT5551 TECHNICAL SPECIFICATIONS NPN EPITAXIAL PLANAR TRANSISTOR Dc Components

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