DXT13003EK Datasheet, Transistor, Diodes

DXT13003EK Features

• Transistor
• BVCEO > 460V
• BVCES > 700V
• BVEBO > 9V
• IC = 1.5A high Continuous Collector Current
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

PDF File Details

Part number:

DXT13003EK

Manufacturer:

DIODES ↗

File Size:

308.49kb

Download:

📄 Datasheet

Description:

Npn high voltage power transistor.

DXT13003EK Application

• Applications the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Termin

TAGS

DXT13003EK

Diodes

📁 Related Datasheet

DXT13003DG - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features • BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector.

DXT13003DK - NPN HIGH VOLTAGE POWER TRANSISTOR (Diodes)
DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features • BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .

DXT2010P5 - NPN MEDIUM POWER TRANSISTOR (Diodes)
ADVANCE INFORMATION Features • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = 6A;.

DXT2011P5 - NPN MEDIUM POWER TRANSISTOR (Diodes)
ADVANCE INFORMATION A Product Line of Diodes Incorporated DXT2011P5 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR POWERDI®5 Features • BVCEO > 100.

DXT2011P5Q - 100V NPN TRANSISTOR (DIODES)
DXT2011P5Q 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR Description This bipolar junction transistor (BJT) is designed to meet the stringent requi.

DXT2012P5 - PNP MEDIUM POWER TRANSISTOR (Diodes)
ADVANCE INFORMATION Features • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = -5..

DXT2013P5 - PNP MEDIUM POWER TRANSISTOR (Diodes)
ADVANCE INFORMATION Features • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = -100V • IC = -.

DXT2014P5 - PNP MEDIUM POWER TRANSISTOR (Diodes)
Features • 43% Smaller than SOT223; 60% Smaller than TO252 • Maximum Height: 1.1mm • Rated up to 3.2W • VCEO = -140V • IC = -4A; ICM = -10A • Low Satu.

DXT2222A - NPN Transistor (Dc Components)
.. DC COMPONENTS CO., LTD. R DXT2222A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descri.

DXT2222A - NPN SURFACE MOUNT TRANSISTOR (Diodes)
DXT2222A 40V NPN SURFACE MOUNT TRANSISTOR IN SOT89 Features  BVCEO > 40V  IC = 600mA High Collector Current  Complementary PNP Type: DXT2907A  Id.