DIM1200ESM33-F000 - IGBT
DIM1200ESM33-F000 Features
* 10µs Short Circuit Withstand
* High Thermal Cycling Capability
* Soft Punch Through Silicon
* Isolated AlSiC Base With AlN Substrates
* Lead Free Construction KEY PARAMETERS VCES VCE(sat)
* (typ) IC (max) IC(PK) (max) 3300V 2.8V 1200A 2400A
* Measured at the aux
