* I I I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS VCES (typ) VCE(sat)
* (max) IC (max) IC(PK) 1700V 2.0V 1200A 2400A
* Measured at auxil
DIM1200NSM17-E000 Datasheet (188.32 KB)
DIM1200NSM17-E000
Dynex Semiconductor
188.32 KB
Single switch igbt module.
DIM1200NSM17-E000 www.DataSheet4U.com DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004.
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