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2SB564A - PNP Transistor

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Description

Designed for low frequency power amplifier applications.

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Datasheet Details

Part number 2SB564A
Manufacturer Dc Components
File Size 237.15 KB
Description PNP Transistor
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DC COMPONENTS CO., LTD. R 2SB564A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage www.DataSheet4U.com .500 Min (12.70) Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -30 -25 -5 -1 800 +150 -55 to +150 Unit V V V A mW o o 3 2 1 .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) .148(3.76) .132(3.36) Collector Current Total Power Dissipation Junction Temperature Storage Temperature .050 o o 5 Typ. 5 Typ. (1.
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