Datasheet4U Logo Datasheet4U.com

2SB563 - PNP Transistor

2SB563 Description

isc Silicon PNP Power Transistor 2SB563 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1. Co.

2SB563 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dis

📥 Download Datasheet

Preview of 2SB563 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB563
Manufacturer
INCHANGE
File Size
205.01 KB
Datasheet
2SB563-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB560 - Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SB561 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB562 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB564 - SILICON TRANSISTOR (Micro Electronics)
  • 2SB564A - PNP Transistor (Dc Components)
  • 2SB566 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB566A - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB566AK - Silicon PNP Transistor (Hitachi Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB563-like datasheet