2SB503 - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) *High Power Dissipation- : PC= 25W(Max)@TC=25℃ *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio power amplifier and regulator applications.
ABSOLUTE MAXIM
