2SB503 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min). High Power Dissipation- : PC= 25W(Max)@TC=25℃. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: 2SB503
Manufacturer: INCHANGE
File Size: 211.28 KB
Datasheet: 2SB503-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous Collector Power D

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2SB503 PNP Transistor INCHANGE

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