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2SB503 - PNP Transistor

2SB503 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min). High Power Dissipation- : PC= 25W(Max)@TC=25℃. Minimum Lot-to-Lot variations.

2SB503 Applications

* Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous Collector Power D

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Datasheet Details

Part number
2SB503
Manufacturer
INCHANGE
File Size
211.28 KB
Datasheet
2SB503-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB503-like datasheet