2SB511 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB511 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1. Compleme.

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Datasheet Specifications

Part number: 2SB511
Manufacturer: INCHANGE
File Size: 214.69 KB
Datasheet: 2SB511-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for 5W AF power amplifier output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector

2SB511 Distributors

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2SB511 PNP Transistor INCHANGE

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