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2SB512 - PNP Transistor

2SB512 Description

isc Silicon PNP Power Transistor 2SB512 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1. Compleme.

2SB512 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dis

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Datasheet Details

Part number
2SB512
Manufacturer
INCHANGE
File Size
209.96 KB
Datasheet
2SB512-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE 2SB512-like datasheet

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