2SB502A
45.54kb
Silicon pnp transistor.
TAGS
📁 Related Datasheet
2SB502 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB503 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB503A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB506 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage-
: VCE(.
2SB506 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB506
DESCRIPTION ·With TO-3 package ·Wide area of.
2SB507 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB507
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Vo.
2SB507 - Silicon PNP Power Transistors
(SavantIC)
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB507
DESCRIPTION ·With TO-220C package ·Complement to type 2SD313 ·Low .
2SB507 - PNP Epitaxial Silicon Transistor
(GME)
PNP Epitaxial Silicon Transistor
FEATURES
Low Frequency Power Amplifier. Complements the 2SD313.
Pb
Lead-free
Production specification
2SB507
.
2SB507 - PNP Transistor
(DC COMPONENTS)
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SB507
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use.
2SB507 - PNP Transistor
(Hottech)
BIPOLAR TRANSISTOR (PNP)
FEATURES Complementary to NPN 2SD313 Low Collector-Emitter Saturation Voltage
MECHANICALDATA Case:TO-220 Case Materia.