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2SB507 - PNP Transistor

2SB507 Description

isc Silicon PNP Power Transistor 2SB507 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.

2SB507 Applications

* Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3.0 A ICM

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Datasheet Details

Part number
2SB507
Manufacturer
INCHANGE
File Size
217.02 KB
Datasheet
2SB507-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
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