2SB507 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB507 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.

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Datasheet Specifications

Part number: 2SB507
Manufacturer: INCHANGE
File Size: 217.02 KB
Datasheet: 2SB507-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3.0 A ICM

2SB507 Distributors

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2SB507 PNP Transistor INCHANGE

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