Part number:
2SB506
Manufacturer:
INCHANGE
File Size:
175.65 KB
Description:
Pnp transistor.
2SB506
INCHANGE
175.65 KB
Pnp transistor.
📁 Related Datasheet
2SB502 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB502A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB503 - PNP Transistor
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isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB503A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB506 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB506
DESCRIPTION ·With TO-3 package ·Wide area of.
2SB507 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB507
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Vo.
2SB507 - Silicon PNP Power Transistors
(SavantIC)
SavantIC Semiconductor
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Product Specification
2SB507
DESCRIPTION ·With TO-220C package ·Complement to type 2SD313 ·Low .
2SB507 - PNP Epitaxial Silicon Transistor
(GME)
PNP Epitaxial Silicon Transistor
FEATURES
Low Frequency Power Amplifier. Complements the 2SD313.
Pb
Lead-free
Production specification
2SB507
.
