2SB526 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SB526 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Complement to Type 2SD356. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SB526
Manufacturer: Inchange Semiconductor
File Size: 217.53 KB
Datasheet: 2SB526-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta

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