2SB526 Datasheet - Inchange Semiconductor

2SB526, Silicon PNP Power Transistor

isc Silicon PNP Power Transistor 2SB526 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Complement to Type 2SD356. Minimum Lot-to-Lot vari.

datasheet Preview Page 1 from Datasheet4u.com

2SB526-InchangeSemiconductor.pdf

2SB526 Datasheet Preview — Preview of 2SB526 PDF

Datasheet Details

Part number:

2SB526

Manufacturer:

Inchange Semiconductor

File Size:

217.53 KB

Description:

Silicon PNP Power Transistor

Applications

* Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta

2SB526 Distributors

📁 Related Datasheet

2SB520 2SB521 2SB522 2SB524 2SB529 2SB502

📌 All Tags

2SB526 Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SB526-like datasheet