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2SB502 - PNP Transistor

2SB502 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High Power Dissipation- : PC= 25W(Max)@TC=25℃. Minimum Lot-to-Lot variations.

2SB502 Applications

* Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -3 A IE Emitt

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Datasheet Details

Part number
2SB502
Manufacturer
INCHANGE
File Size
211.47 KB
Datasheet
2SB502-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
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