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2SB502 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) High Power Dissipation- : PC= 25W(Max)@TC=25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Datasheet Details

Part number 2SB502
Manufacturer INCHANGE
File Size 211.47 KB
Description PNP Transistor
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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 1.5 W 25 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB502 isc website：www.iscsemi.
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