2SB508 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB508 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.

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Datasheet Specifications

Part number: 2SB508
Manufacturer: INCHANGE
File Size: 189.21 KB
Datasheet: 2SB508-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3.0 A ICM

2SB508 Distributors

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2SB508 PNP Transistor INCHANGE

INCHANGE 2SB508-like datasheet