2SB520
INCHANGE
174.65kb
Pnp transistor. *Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) *Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -7A *W
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2SB521 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB521
DESCRIPTION ·With TO-220 package ·Low collec.
2SB521 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB521
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·Low Collec.
2SB522 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB522
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·Low Collec.
2SB524 - TRANSISTOR
(ETC)
.
2SB526 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SB526
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement t.
2SB529 - Silicon PNP Transistor
(ETC)
.
2SB502 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB502A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB503 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB503A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
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