Toshiba manufacturer logo Part number: 2SB552 Manufacturer: Toshiba ↗ File Size: 123.04kb Download: 📄 Datasheet Description: Silicon pnp transistor.
2SB550 - SILICON POWER TRANSISTOR (SavantIC) SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB550 DESCRIPTION ·With TO-66 package ·Low collect.
2SB550 - PNP Transistor (INCHANGE) isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB550 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·Low Collecto.
2SB551 - SILICON POWER TRANSISTOR (SavantIC) SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB551 DESCRIPTION ·With TO-66 package ·Low collect.
2SB551 - PNP Transistor (INCHANGE) isc Silicon PNP Power Transistors 2SB551 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Typ.)@IC= -2A ·High Power Dissipation- : P.
2SB552 - SILICON POWER TRANSISTOR (SavantIC) SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION ·With TO-3 package ·Complement t.
2SB552 - PNP Transistor (INCHANGE) isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·High Power Dissipation- : PC= 150W(Max)@T.
2SB553 - SILICON PNP TRANSISTOR (Toshiba) : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in .
2SB553 - SILICON POWER TRANSISTOR (SavantIC) SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION ·With TO-220C package ·Complemen.
2SB553 - PNP Transistor (INCHANGE) isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 ·Minimum Lo.
2SB554 - PNP Transistor (Toshiba) : SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS, FEATURES • High Power Dissipation • High Breakdown Voltage : P c = 1.
