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2SB553 - SILICON PNP TRANSISTOR

2SB553 Description

: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.POWER AMPLIFIER APPLICATIONS.INDUSTRIAL APPLICATIONS Unit in .

2SB553 Features

* Low Collector Saturation Voltage : VcE(sat)=-0.4V (Max. ) at Ic=-4A
* Complementray to 2SD553. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Ta=25°C Dissipati

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SILICON PNP TRANSISTOR Toshiba
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