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2SB553 - SILICON PNP TRANSISTOR

Datasheet Summary

Features

  • Low Collector Saturation Voltage : VcE(sat)=-0.4V (Max. ) at Ic=-4A.
  • Complementray to 2SD553.

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Datasheet preview – 2SB553

Datasheet Details

Part number 2SB553
Manufacturer Toshiba
File Size 136.20 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 2SB553 Datasheet
Additional preview pages of the 2SB553 datasheet.

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Full PDF Text Transcription

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: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX. 3.6 ±0.2 FEATURES • Low Collector Saturation Voltage : VcE(sat)=-0.4V (Max.) at Ic=-4A • Complementray to 2SD553. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature Storage Temperature Range VCBO VCEO v EBO ic Tstg -70 -50 -5 -7 1.5 40 150 -55^150 V °C °C 1. BASE 2. COLLECTOR (HEAT SINK; 3.
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