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2SB557 PNP Transistor

2SB557 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Power Dissipation- : PC= 80W(Max)@TC=25℃. Complement to Type 2SD427.

2SB557 Applications

* Designed for power amplifier applications.
* Recommended for 50W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltag

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Datasheet Details

Part number
2SB557
Manufacturer
INCHANGE
File Size
211.01 KB
Datasheet
2SB557-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB557-like datasheet