Part number:
2SB595
Manufacturer:
File Size:
89.39 KB
Description:
Silicon pnp transistor.
* High Breakdown Voltage : VCEO=-100V
* Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.)
* Complementary to 2SD525.
* Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector
2SB595
89.39 KB
Silicon pnp transistor.
📁 Related Datasheet
2SB595 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB595
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown V.
2SB595 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB595
DESCRIPTION ·With TO-220C package ·Complemen.
2SB596 - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES • Good Linearity of hp E . • Complementary to 2SD526. • Reme.
2SB596 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage-
.
2SB502 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB502A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB503 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB503A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
