2SB595 Datasheet - Toshiba

2SB595 SILICON PNP TRANSISTOR

2SB595 Features

* High Breakdown Voltage : VCEO=-100V

* Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.)

* Complementary to 2SD525.

* Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector

Datasheet Details

2SB595

89.39 KB

Silicon pnp transistor.

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2SB595 SILICON PNP TRANSISTOR Toshiba

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