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2SB595 SILICON PNP TRANSISTOR

2SB595 Description

SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS..

2SB595 Features

* High Breakdown Voltage : VCEO=-100V
* Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max. )
* Complementary to 2SD525.
* Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector

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SILICON PNP TRANSISTOR Toshiba
Toshiba 2SB595-like datasheet