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2SB595 - SILICON PNP TRANSISTOR

Datasheet Summary

Features

  • High Breakdown Voltage : VCEO=-100V.
  • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max. ).
  • Complementary to 2SD525.
  • Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage.

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Datasheet preview – 2SB595

Datasheet Details

Part number 2SB595
Manufacturer Toshiba
File Size 89.39 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 2SB595 Datasheet
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Full PDF Text Transcription

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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.) • Complementary to 2SD525. • Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage VcBO VCEO VEBO Collector Current ic Emitter Current IE Base Current Collector Power Dissi- pation (T C =25°C) Junction Temperature Storage Temperature Ranee IB PC Tstg RATING -100 -100 -5 -5 -4 40 150 -55 ^150 UNIT V °C 10.3 MAX. Unit in mm 03.6±O.2 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC EIAJ TOSHIBA TO-220AB Mounting Kit No. AC75 Weight : 1.
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