Part number:
2SB506
Manufacturer:
SavantIC
File Size:
135.50 KB
Description:
Silicon power transistor.
2SB506
SavantIC
135.50 KB
Silicon power transistor.
📁 Related Datasheet
2SB502 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB502A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB503 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB503A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB506 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage-
: VCE(.
2SB507 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB507
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Vo.
2SB507 - Silicon PNP Power Transistors
(SavantIC)
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB507
DESCRIPTION ·With TO-220C package ·Complement to type 2SD313 ·Low .
2SB507 - PNP Epitaxial Silicon Transistor
(GME)
PNP Epitaxial Silicon Transistor
FEATURES
Low Frequency Power Amplifier. Complements the 2SD313.
Pb
Lead-free
Production specification
2SB507
.
