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2SB567 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter BreakdownVoltage- : V(BR)CEO= -150V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -2.0(Max.) @IC= -0.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV vertical deflection output applications.

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Datasheet Details

Part number 2SB567
Manufacturer INCHANGE
File Size 184.09 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB567 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -2.0(Max.) @IC= -0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A Collector Power Dissipation@TC=25℃ 30 PC W Collector Power Dissipation@Ta=25℃ 1.8 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -45~150 ℃ isc website：www.
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