Description
D56/ www.daysemi.jp N-Channel 100 V (D-S) MOSFET .
Features
* PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.095 at VGS = 10 V 0.100 at VGS = 6 V ID (A) 15 15
* TrenchFET® Power MOSFETS
* 175 °C Junction Temperature
Applications
* D
* Primary Side Switch
TO-252
G
G
D
S
S N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conductio